BSS138LT1G Product Summary

Basic Information

• Part Number: BSS138LT1G
• Package Type: SOT-23 (Pb-Free)
• Shipping Quantity: 3000 per Tape & Reel
• Case Style: CASE 318 STYLE 21

General Description

The BSS138LT1G is an N-Channel enhancement mode MOSFET designed for low voltage applications. It features a low threshold voltage, making it ideal for use in DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. The device is housed in a miniature SOT-23 surface mount package, saving board space.

Features

• Low Threshold Voltage (VGS(th)): 0.85 V to 1.5 V
• Drain-Source Voltage (VDSS): 50 Vdc
• Drain Current (ID):Continuous: 200 mAPulsed: 800 mA
• On-State Resistance (RDS(on)): 3.5 Ω @ VGS = 10 V
• ESD Protection: HBM Class 0A, MM Class M1A, CDM Class IV
• Automotive Grade: BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• RoHS Compliance: Pb-Free, Halogen Free/BFR Free

Marking Diagram & Pin Assignment

• Device Code: J1
• Date Code: M
• Pb-Free Package Indicator: �
• Pin Configuration:Pin 1: GatePin 2: SourcePin 3: Drain

Ordering Information

• BSS138LT1G: SOT-23 (Pb-Free), 3000 per Tape & Reel
• BVSS138LT1G: SOT-23 (Pb-Free), 3000 per Tape & Reel
• BSS138LT7G: SOT-23 (Pb-Free), 3500 per Tape & Reel
• BSS138LT3G: SOT-23 (Pb-Free), 10000 per Tape & Reel

Maximum Ratings (@TA = 25°C, unless otherwise noted)

• Drain-Source Voltage (VDSS): 50 Vdc
• Gate-Source Voltage (VGS): ±20 Vdc
• Drain Current (ID):Continuous: 200 mAPulsed: 800 mA
• Total Power Dissipation (PD): 225 mW
• Operating and Storage Temperature Range (TJ, TSTG): -55 to +150 °C
• Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W
• Maximum Lead Temperature for Soldering Purposes (TL): 260 °C

Electrical Characteristics (@TA = 25°C, unless otherwise noted)

• OFF CHARACTERISTICS:Drain-Source Breakdown Voltage (V(BR)DSS): 50 V (VGS = 0 V, ID = 250 µA)Zero Gate Voltage Drain Current (IDSS):VDS = 25 V, VGS = 0 V: 0.1 µAVDS = 50 V, VGS = 0 V: 0.5 µAVDS = 50 V, VGS = 0 V, TJ = 150°C: 5.0 µAGate-Source Leakage Current (IGSS): ±0.1 µA (VGS = ±20 V, VDS = 0 V)
• ON CHARACTERISTICS:Gate-Source Threshold Voltage (VGS(th)): 0.85 to 1.5 V (VDS = VGS, ID = 1.0 mA)Static Drain-Source On-Resistance (RDS(on)):VGS = 2.75 V, ID < 200 mA, TA = -40°C to +85°C: 5.6 ΩVGS = 5.0 V, ID = 200 mA: 3.5 ΩForward Transconductance (gFS): 100 mmhos (VDS = 25 V, ID = 200 mA, f = 1.0 kHz)
• DYNAMIC CHARACTERISTICS:Input Capacitance (Ciss): 40 to 50 pF (VDS = 25 V, VGS = 0, f = 1 MHz)Output Capacitance (Coss): 12 to 25 pFTransfer Capacitance (Crss): 3.5 to 5.0 pF
• SWITCHING CHARACTERISTICS:Turn-On Delay Time (td(on)): 20 ns (VDD = 30 V, ID = 0.2 A)Turn-Off Delay Time (td(off)): 20 ns

Typical Electrical Characteristics

• On-Region Characteristics: See Figure 1
• Transfer Characteristics: See Figure 2
• On-Resistance Variation with Temperature: See Figure 3
• Threshold Voltage Variation with Temperature: See Figure 4
• Gate Charge: See Figure 5
• On-Resistance versus Drain Current: See Figures 6, 7, 8, 9, 10
• Body Diode Forward Voltage: See Figure 11
• Capacitance: See Figure 12
• Safe Operating Area: See Figure 13

Mechanical Case Outline Package Dimensions

• SOT-23 (TO-236): 2.90x1.30x1.00 mm
• Pin Configuration:Pin 1: GatePin 2: SourcePin 3: Drain