NXP PMDXB1200UPEZ

View All Single, Pre-Biased Bipolar Transistors by NXP

Part Number:
PMDXB1200UPEZ
Manufacturer:
NXP
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
Description:
MOSFET 30V
In stock 1,798,650

" Not available to buy online? Want the lower wholesale price? Please send RFQ, we will respond immediately

Leave Us A Message!

[email protected]

We`re not around but we still want to hear from you! Leave us a note:

SEND

*You can contact us directly on WhatsApp!

Specifications

Type

Paramete

Type

Paramete

Current - Continuous Drain (Id) @ 25°C

Grade

Supplier Device Package

Drain to Source Voltage (Vdss)

Qualification

Package / Case

Gate Charge (Qg) (Max) @ Vgs

Operating Temperature

Technology

FET Feature

Mounting Type

Configuration

Vgs(th) (Max) @ Id

Power - Max

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) (Max) @ Vds

Overview

PMDXB1200UPEZ Product Information Summary

Name: PMDXB1200UPEZ
Brand: NXP
SKU: JM-PMDXB1200UPEZ
Availability: InStock

1. General Description

The PMDXB1200UPEZ is a dual P-channel enhancement mode Field-Effect Transistor (FET) developed by Nexperia. It adopts Trench MOSFET technology and is housed in a leadless ultra-small DFN1010B-6 (SOT1216) surface-mounted device (SMD) plastic package. With a compact form factor and reliable performance, it is designed for low-voltage, medium-current switching applications, complying with relevant industry standards and specifications.

2. Core Features and Benefits

Low Threshold Voltage: Enables efficient switching control with low drive voltage requirements.
Ultra-Compact Package: Measures 1.1 x 1.0 x 0.37 mm (DFN1010B-6/SOT1216), ideal for space-constrained designs.
Trench MOSFET Technology: Delivers excellent electrical performance, including low on-state resistance and high switching speed.
Robust ESD Protection: Withstands electrostatic discharge (ESD) greater than 2 kV (HBM), enhancing reliability in harsh environments.
Dual Transistor Integration: Two independent P-channel MOSFETs in one package, reducing component count and PCB space.

3. Applications

Relay driver circuits
High-speed line driver applications
High-side loadswitch implementations
General-purpose switching circuits

4. Quick Reference Data (Per Transistor)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VDS	Drain-source voltage	Tj = 25 °C	-	-	-30	V
VGS	Gate-source voltage	-	-8	-	8	V
ID	Drain current	VGS = -4.5 V; Tamb = 25 °C [1]	-	-	-410	mA
RDSon	Drain-source on-state resistance	VGS = -4.5 V; ID = -410 mA; Tj = 25 °C	-	1.2	1.4	Ω [1] Device mounted on an FR4 PCB (single-sided copper, tin-plated) with a 1 cm² drain mounting pad.

5. Pinning Information

5.1 Pin Configuration (DFN1010B-6/SOT1216 Package)

Pin Number	Symbol	Description
1	S1	Source of Transistor 1 (TR1)
2	G1	Gate of Transistor 1 (TR1)
3	D2	Drain of Transistor 2 (TR2)
4	S2	Source of Transistor 2 (TR2)
5	G2	Gate of Transistor 2 (TR2)
6	D1	Drain of Transistor 1 (TR1)
7	D1	Drain of Transistor 1 (TR1) [Duplicate pin]
8	D2	Drain of Transistor 2 (TR2) [Duplicate pin]

5.2 Package Outline

Type: DFN1010B-6 (SOT1216)
Leadless plastic thermal enhanced ultra-thin small outline package
Dimensions (mm, nominal): 1.1 (length) x 1.0 (width) x 0.37 (height)
Pin 1 index area for easy orientation during assembly

6. Ordering Information

Type Number	Package	Package Description	Version
PMDXB1200UPEZ	DFN1010B-6	Plastic thermal enhanced ultra-thin small outline package; no leads; 6 terminals	SOT1216

7. Marking Information

Marking Code: 11 10 00 (binary marking code)
Reading Direction: Refer to the pin 1 indication mark on the package
Mark-free area is provided for assembly and inspection

8. Limiting Values (Per Transistor, IEC 60134 Absolute Maximum Rating System)

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	Drain-source voltage	Tj = 25 °C	-	-30	V
VGS	Gate-source voltage	-	-8	8	V
ID	Continuous drain current	VGS = -4.5 V; Tamb = 25 °C [1]	-	-410	mA
ID	Continuous drain current	VGS = -4.5 V; Tamb = 100 °C [1]	-	-260	mA
IDM	Peak drain current	Tamb = 25 °C; single pulse; tp ≤ 10 µs	-	-1.7	A
Ptot	Total power dissipation	Tamb = 25 °C [2]	-	285	mW
Ptot	Total power dissipation	Tsp = 25 °C [1]	-	410	mW
Ptot	Total power dissipation	- [Special condition]	-	4030	mW
IS	Source current (source-drain diode)	Tamb = 25 °C [1]	-	-410	mA
Tj	Junction temperature	-	-55	150	°C
Tamb	Ambient temperature	-	-55	150	°C
Tstg	Storage temperature	-	-65	150	°C [1] Device mounted on an FR4 PCB (single-sided copper, tin-plated) with a 1 cm² drain mounting pad.[2] Device mounted on an FR4 PCB (single-sided copper, tin-plated) with standard footprint.

9. Thermal Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-a)	Thermal resistance (junction to ambient)	Free air [2]	-	380	440	K/W
Rth(j-a)	Thermal resistance (junction to ambient)	Free air [1]	-	275	305	K/W
Rth(j-sp)	Thermal resistance (junction to solder point)	-	-	27	31	K/W [1] Device mounted on an FR4 PCB (single-sided copper, tin-plated) with a 1 cm² drain mounting pad.[2] Device mounted on an FR4 PCB (single-sided copper, tin-plated) with standard footprint.

10. Electrical Characteristics (Per Transistor, Tj = 25 °C Unless Stated Otherwise)

10.1 Static Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Drain leakage current (IDSS)	VDS = -30 V; VGS = 0 V	-	-	-1	µA
Gate leakage current (IGSS)	VGS = 8 V; VDS = 0 V	-	-	5	µA
Gate leakage current (IGSS)	VGS = -8 V; VDS = 0 V	-	-	-5	µA
Gate leakage current (IGSS)	VGS = 4.5 V; VDS = 0 V	-	-	1	µA
Gate leakage current (IGSS)	VGS = -4.5 V; VDS = 0 V	-	-	-1	µA
Gate leakage current (IGSS)	VGS = 2.5 V; VDS = 0 V	-	-	100	nA
Gate leakage current (IGSS)	VGS = -2.5 V; VDS = 0 V	-	-	-100	nA
Drain-source on-state resistance (RDSon)	VGS = -4.5 V; ID = -410 mA	-	1.2	1.4	Ω
Drain-source on-state resistance (RDSon)	VGS = -4.5 V; ID = -410 mA; Tj = 150 °C	-	2	2.4	Ω
Drain-source on-state resistance (RDSon)	VGS = -2.5 V; ID = -320 mA	-	1.7	2.3	Ω
Drain-source on-state resistance (RDSon)	VGS = -1.8 V; ID = -80 mA	-	2.1	3.1	Ω
Drain-source on-state resistance (RDSon)	VGS = -1.5 V; ID = -10 mA	-	3	5.1	Ω
Forward transconductance (gfs)	VDS = -10 V; ID = -410 mA	-	820	-	mS
Gate-source threshold voltage (VGS(th))	ID = -250 μA; VDS = VGS	-	-	-	V

10.2 Dynamic Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Total gate charge (QG)	VDS = -15 V; ID = -410 mA; VGS = -4.5 V	-	0.7	1.2	nC
Gate-source charge (QGS)	VDS = -15 V; ID = -410 mA; VGS = -4.5 V	-	0.17	-	nC
Gate-drain charge (QGD)	VDS = -15 V; ID = -410 mA; VGS = -4.5 V	-	0.16	-	nC
Input capacitance (Ciss)	VDS = -15 V; f = 1 MHz; VGS = 0 V	-	43.2	-	pF
Output capacitance (Coss)	VDS = -15 V; f = 1 MHz; VGS = 0 V	-	5.9	-	pF
Reverse transfer capacitance (Crss)	VDS = -15 V; f = 1 MHz; VGS = 0 V	-	4.2	-	pF
Turn-on delay time (td(on))	VDS = -15 V; ID = -410 mA; VGS = -4.5 V; RG(ext) = 6 Ω	-	3	-	ns
Rise time (tr)	VDS = -15 V; ID = -410 mA; VGS = -4.5 V; RG(ext) = 6 Ω	-	4	-	ns
Turn-off delay time (td(off))	VDS = -15 V; ID = -410 mA; VGS = -4.5 V; RG(ext) = 6 Ω	-	14	-	ns
Fall time (tf)	VDS = -15 V; ID = -410 mA; VGS = -4.5 V; RG(ext) = 6 Ω	-	5	-	ns

10.3 Source-Drain Diode Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Source-drain voltage (VSD)	IS = -410 mA; VGS = 0 V	-	-0.95	-1.2	V

11. Soldering and Footprint

Package Footprint: Designed for reflow soldering; refer to the recommended solder land dimensions (1.1 x 1.0 mm base with specific pad layouts for terminals).
Soldering Guidelines: Follow standard SMD reflow soldering processes, ensuring proper thermal profiling to avoid package damage.
PCB Mounting: Use the specified FR4 PCB with single-sided copper and tin-plating for optimal thermal and electrical performance.

Shopping Guide

Purchase

No need to register to order from JMChip Electronics, but signing in lets you track your order like a pro. Give it a try for a smoother shopping ride.

Means

Easy peasy! Pay your way with PayPal, Credit Card, or wire transfer in USD. We've got you covered.

RFQ（Request for Quotations）

Get the freshest prices and stock updates by asking for a quote! Our sales team will shoot you an email within a day. It's that simple.

IMPORTANT NOTICE

1. Look out for your order details in your inbox! (If it's missing, check the spam folder just in case.)

2. Our sales manager will double-check the order and keep you posted on any price or stock changes. No worries, we've got you covered.

Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.